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| MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-24K * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 E2 B2X 480.25 C2E1 30 E2 E2 B2 6 15 B1 E1 10.5 6 62 C1 C1 C2E1 E2 B1X 9 B1X 14 8 15.3 3 17 25 8 17 25 8 17 21.5 3 8 1.8 Tab#110, t=0.5 E1 B1 3-M6 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 100 100 800 5 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=100A, IB=2A -IC=100A (diode forward voltage) IC=100A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=100A, IB1=-IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 400 3.0 3.5 1.8 -- 3.0 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE 160 IB=2A IB=1A IB=0.5A IB=0.1A 40 IB=0.2A 10 4 7 5 3 2 10 3 7 5 3 2 VCE=5.0V VCE=2.8V 120 80 0 Tj=25C 0 1 2 3 4 5 VCE (V) 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE BASE CURRENT IB (A) 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 7 5 3 2 10 -2 1.8 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VCE=2.8V Tj=25C 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 VBE(sat) VCE(sat) SATURATION VOLTAGE IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2.2 2.6 3.0 3.4 VBE (V) 3.8 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 5 IC=50A 4 IC=100A ton, ts, tf (s) IC=70A 10 2 7 5 3 2 10 1 7 5 3 2 10 0 ts tf ton 3 2 SWITCHING TIME 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) 10 7 5 3 2 VCC=600V IB1=-IB2=2A -1 COLLECTOR CURRENT Tj=25C Tj=125C 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1 VCC=600V IB1=2A IC=100A REVERSE BIAS SAFE OPERATING AREA 320 Tj=125C ts COLLECTOR CURRENT IC (A) ts, tf (s) 280 240 200 160 IB2=-2A 120 80 40 0 0 400 800 1200 1600 SWITCHING TIME tf Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 50s 100s 1m 200 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 90 SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION s s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.25 DC VCE (V) CASE TEMPERATURE TC (C) 0.20 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Zth (j-c) (C/ W) 0.15 0.10 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.05 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-24K HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=2A Tj=25C 3 Tj=125C 2 Irr (A), Qrr (c) 10 2 7 5 3 2 10 1 7 5 3 2 Irr Qrr 10 0 trr 10 2 800 10 1 trr (s) Feb.1999 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s) |
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